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排序方式: 共有1315条查询结果,搜索用时 46 毫秒
1.
F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
2.
介绍了一种新型火焰安全监控系统,并详述了系统实现的方法及火焰检测部分的软硬件设计.为燃烧器的管理和燃料安全提供了一种很好的方法。 相似文献
3.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
4.
B. A. Young J. R. Williams S. W. Deiker S. T. Ruggiero B. Cabrera 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):307-310
We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented. 相似文献
5.
L. Verger J. P. Bonnefoy F. Glasser P. Ouvrier-Buffet 《Journal of Electronic Materials》1997,26(6):738-744
There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the
associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new
electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications.
The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent
results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm2 with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm3 CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging. 相似文献
6.
M. Zandian J. G. Pasko J. M. Arias R. E. De Wames S. H. Shin 《Journal of Electronic Materials》1995,24(5):681-684
Measurements of 77K RoA and 300K reverse bias dynamic impedance (RdA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar
P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg1-xCdxTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as
n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents
at small and modest reverse bias. We have observed that RoA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature RdA values. Diode arrays with high room temperature RdA values at one volt reverse bias also have high RoA values at 77K. Similarly, low RdA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias
of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature
measurements of current-voltage characteristics to evaluate Hg1-xCdxTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria
for further study at lower temperatures. 相似文献
7.
8.
本文采用 2只扩散杯 ,一只选择渗透率较大的滤膜 ,使2 2 2 Rn和2 2 0 Rn能很容易的进入。另一只选择渗透率较小的滤膜 ,该滤膜只允许2 2 2 Rn进入 ,半衰期较短的2 2 0 Rn被阻挡在外面。通过不同滤膜扩散率的差异 ,改变探测器的空气交换率 ,从而达到同时测量2 2 2 Rn和2 2 0 Rn的目的 相似文献
9.
Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation 总被引:1,自引:0,他引:1
《Sensors and actuators. A, Physical》1997,60(1-3):154-159
This paper presents the development of micromachined thin-film silicon microbolometers which can be used for detection of soft X-ray, UV, visible and infrared radiation. The detector structure is a 1 μm thick polysilicon/Si3N4 membrane suspended over a cavity. This structure has been obtained by anisotropic etching of silicon with a previously deposited polysilicon/Si3N4 sandwich. Alternatively, porous silicon has been used as the sacrificial layer. Devices have been characterized. Good values of the voltage responsivity and detectivity have been obtained. 相似文献
10.
Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions. 相似文献